Pekka
Laukkanen
University Research Fellow, Materials Research Laboratory
Docent, Department of Physics and Astronomy

Contact

Areas of expertise

surface science
semiconductors, surface passivation, film growth

Biography

Pekka Laukkanen obtained his MSc degree in 2000 at Tampere University of Technology in the field of optoelectronics. He completed his PhD thesis in 2005 in the area of surface physics at University of Turku. He is now working at interface between surface science and semiconductor technology, trying to improve interconnection and collaboration between these fields. His expertise area includes photoelectron spectroscopy, scanning tunneling microscopy, electron diffraction, surface passivation, interface defects, and semiconductor technology. Laukkanen has published 130 refereed articles, four book chapters, and three patents.

Teaching

Recently I have teched the following courses at the University of Turku:

- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)

- Electrical properties of solids (Kiinteän aineen sähköiset ominaisuudet)

- Semiconductors (Puolijohteet)

- Semiconductor spectroscopy (method course)

Research

We have investigated surface properties: chemical, electronic, and structural ones of semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED, RHEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy (including synchrotron sources). One goal has been to develop the connection or collaboration between the surface science and the semiconductor technology disciplines. More recently we have focused on the question how to decrease surface-related electrical losses and malfunctions in various semiconductor-based devices like capacitors, sensors, solar cells, and transistors. We have tried to understand reasons for formation of defect levels in device surfaces and to find controlled methods to decrease the amount of defect levels. 

Publications

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Decreasing Defect-State Density of Al2O3/GaxIn1- xAs Device Interfaces with InOx Structures (2017)

Advanced Materials Interfaces
Jaakko Mäkelä, Marjukka Tuominen, Johnny Dahl, Sari Granroth, Muhammad Yasir, Juha-Pekka Lehtiö, Rami Roope Uusitalo, Mikhail Kuzmin, Marko Punkkinen, Pekka Laukkanen, Kalevi Kokko, Roberto Félix, Mika Lastusaari, Ville Polojärvi, Jari Lyytikäinen, Antti Tukiainen, Mircea Guina
(Vertaisarvioitu alkuperäisartikkeli tai data-artikkeli tieteellisessä aikakauslehdessä (A1))

Comparison of Chemical, Electronic, and Optical Properties of Mg-Doped AlGaN (2016)

Journal of Physical Chemistry C
Mäkelä J., Tuominen M., Nieminen T., Yasir M., Kuzmin M., Dahl J., Punkkinen M., Laukkanen P., Kokko K., Osiecki J., Schulte K., Lastusaari M., Huhtinen H., Paturi P.
(Vertaisarvioitu alkuperäisartikkeli tai data-artikkeli tieteellisessä aikakauslehdessä (A1))

Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions (2016)

Advanced Materials Interfaces
Kuzmin M, Laukkanen P, Makela J, Yasir M, Tuominen M, Dahl J, Punkkinen MPJ, Kokko K, Hedman HP, Moon J, Punkkinen R, Lastusaari M, Polojarvi V, Korpijarvi VM, Guina M
(Vertaisarvioitu alkuperäisartikkeli tai data-artikkeli tieteellisessä aikakauslehdessä (A1))