Pekka
Laukkanen
University Research Fellow, Materials Research Laboratory
Docent, Department of Physics and Astronomy

Contact

Areas of expertise

surface science
semiconductors, surface passivation, film growth

Biography

Pekka Laukkanen obtained his MSc degree in 2000 at Tampere University of Technology in the field of optoelectronics. He completed his PhD thesis in 2005 in the area of surface physics at University of Turku. He is now working at interface between surface science and semiconductor technology, trying to improve interconnection and collaboration between these fields. His expertise area includes photoelectron spectroscopy, scanning tunneling microscopy, electron diffraction, surface passivation, interface defects, and semiconductor technology. Laukkanen has published 130 refereed articles, four book chapters, and three patents.

Teaching

Recently I have teched the following courses at the University of Turku:

- Phases and properties of materials (Aineen olomuodot ja ominaisuudet)

- Electrical properties of solids (Kiinteän aineen sähköiset ominaisuudet)

- Semiconductors (Puolijohteet)

- Semiconductor spectroscopy (method course)

Research

We have investigated surface properties: chemical, electronic, and structural ones of semiconductor crystals including silicon (Si), germanium (Ge), and III-V compound semiconductors (e.g. GaAs, GaN, InAs, InP) by means of electron diffraction (LEED, RHEED), scanning tunneling microscopy and spectroscopy (STM/STS), and photoelectron spectroscopy (including synchrotron sources). One goal has been to develop the connection or collaboration between the surface science and the semiconductor technology disciplines. More recently we have focused on the question how to decrease surface-related electrical losses and malfunctions in various semiconductor-based devices like capacitors, sensors, solar cells, and transistors. We have tried to understand reasons for formation of defect levels in device surfaces and to find controlled methods to decrease the amount of defect levels. 

Publications

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Imaging empty states on the Ge(100) surface at 12 K (2018)

Physical Review B
M. Kuzmin, J. Mäkelä, J.-P. Lehtiö, M. Yasir, M. Tuominen, Z.S. Jahanshah Rad, A. Lahti, M.P.J. Punkkinen, P. Laukkanen, K. Kokko
(Vertaisarvioitu alkuperäisartikkeli tai data-artikkeli tieteellisessä aikakauslehdessä (A1))

Surface doping of GaxIn1−xAs semiconductor crystals with magnesium (2018)

Materialia
Yasir M, Mäkelä J, Koiva D, Tuominen M, Dahl J, Lehtiö J, Kuzmin M, Rad ZJ, Punkkinen M, Laukkanen P, Kokko K, Polojärvi V, Lyytikäinen J, Tukiainen A, Guina M
(Vertaisarvioitu alkuperäisartikkeli tai data-artikkeli tieteellisessä aikakauslehdessä (A1))

Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing (2018)

ACS Applied Materials and Interfaces
Marjukka Tuominen, Jaakko Mäkelä, Muhammad Yasir, Johnny Dahl, Sari Granroth, Juha-Pekka Lehtiö, Roberto Félix, Pekka Laukkanen, Mikhail Kuzmin, Mikko Laitinen, Marko P.J. Punkkinen, Hannu-Pekka Hedman, Risto Punkkinen, Ville Polojärvi, Jari Lyytikäinen, Antti Tukiainen, Mircea Guina, Kalevi Kokko
(Vertaisarvioitu alkuperäisartikkeli tai data-artikkeli tieteellisessä aikakauslehdessä (A1))